SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
脊形结构GaN蓝光激光器的热模拟分析
叶晓军; 种明; 陈良惠
2004
Source Publication半导体学报
Volume25Issue:12Pages:1680-1684
Abstract利用二维热传导模型分析了GaN激光器的温度特性.计算了有源区在连续工作条件下的最大温升,分析了激光器工作时的功率密度和p电极比接触电阻率等参数对温度特性的影响.模拟结果表明,采用不同衬底和不同装配形式对器件温度特性的影响很大,正装形式下,窄的脊形条宽能提高器件的高温工作稳定性.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1774584
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17313
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
叶晓军,种明,陈良惠. 脊形结构GaN蓝光激光器的热模拟分析[J]. 半导体学报,2004,25(12):1680-1684.
APA 叶晓军,种明,&陈良惠.(2004).脊形结构GaN蓝光激光器的热模拟分析.半导体学报,25(12),1680-1684.
MLA 叶晓军,et al."脊形结构GaN蓝光激光器的热模拟分析".半导体学报 25.12(2004):1680-1684.
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