SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides
Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Junxi; Wang Lei; Zhao Wanshun; Wang Xiaoliang; Zeng Yiping; Li Jinmin
2004
Source Publication半导体学报
Volume25Issue:10Pages:1205-1210
Abstract50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.
metadata_83institute of semiconductors,the chinese academy of sciences
Subject Area半导体材料
Funding Organization国家重点基础研究专项基金,国家高技术研究发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:1799396
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17297
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Sun Guosheng,Zhang Yongxing,Gao Xin,et al. Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides[J]. 半导体学报,2004,25(10):1205-1210.
APA Sun Guosheng.,Zhang Yongxing.,Gao Xin.,Wang Junxi.,Wang Lei.,...&Li Jinmin.(2004).Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides.半导体学报,25(10),1205-1210.
MLA Sun Guosheng,et al."Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides".半导体学报 25.10(2004):1205-1210.
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