800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

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	800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser
	Wang Yonggang; Ma Xiaoyu; Cao Shiyang; Zhang Zhigang
	2004
Source Publication	半导体学报
Volume	25 Issue:10 Pages:1233-1237
Abstract	A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.
metadata_83	institute of semiconductors,the chinese academy of sciences;ultrafast laser laboratory,school of precision instrument and optoelectronics engineering,university of tianjin
Subject Area	半导体器件
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:1799453
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17295
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Wang Yonggang,Ma Xiaoyu,Cao Shiyang,et al. 800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser[J]. 半导体学报,2004,25(10):1233-1237.
APA	Wang Yonggang,Ma Xiaoyu,Cao Shiyang,&Zhang Zhigang.(2004).800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser.半导体学报,25(10),1233-1237.
MLA	Wang Yonggang,et al."800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser".半导体学报 25.10(2004):1233-1237.

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