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800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser
Wang Yonggang; Ma Xiaoyu; Cao Shiyang; Zhang Zhigang
2004
Source Publication半导体学报
Volume25Issue:10Pages:1233-1237
AbstractA novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.
metadata_83institute of semiconductors,the chinese academy of sciences;ultrafast laser laboratory,school of precision instrument and optoelectronics engineering,university of tianjin
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:1799453
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17295
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Yonggang,Ma Xiaoyu,Cao Shiyang,et al. 800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser[J]. 半导体学报,2004,25(10):1233-1237.
APA Wang Yonggang,Ma Xiaoyu,Cao Shiyang,&Zhang Zhigang.(2004).800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser.半导体学报,25(10),1233-1237.
MLA Wang Yonggang,et al."800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser".半导体学报 25.10(2004):1233-1237.
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