SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SOI热光调制器
王章涛; 樊中朝; 夏金松; 陈少武; 余金中
2004
Source Publication半导体学报
Volume25Issue:10Pages:1315-1318
Abstract设计和制作了多模干涉马赫曾德型热光调制器.通过合理选择SOI光波导的埋层和包层的厚度,使制作出的调制器有良好的综合性能.调制器调制深度为91%,功耗为0.35W,调制速度约为27μs.减小多模干涉耦合器的设计误差和提高刻蚀均匀性可以改善调制器的性能.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金,国家高技术研究发展计划,国家重点基础研究发展计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:1799720
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17285
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王章涛,樊中朝,夏金松,等. SOI热光调制器[J]. 半导体学报,2004,25(10):1315-1318.
APA 王章涛,樊中朝,夏金松,陈少武,&余金中.(2004).SOI热光调制器.半导体学报,25(10),1315-1318.
MLA 王章涛,et al."SOI热光调制器".半导体学报 25.10(2004):1315-1318.
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