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ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响
樊中朝; 余金中; 陈少武; 杨笛; 严清峰; 王良臣
2004
Source Publication半导体学报
Volume25Issue:11Pages:1500-1504
Abstract研究了以C4F8/SF6/O2为刻蚀气体,利用ICP刻蚀技术制作SOI脊形光波导过程中,刻蚀参数与侧壁粗糙度的关系.实验结果表明偏压、气体比例、压强是影响侧壁粗糙度的关键参数,在低偏压、低C4F8/SF6比和较高压强下更容易获得低粗糙度的侧壁.通过优化刻蚀参数,获得了侧壁粗糙度和传输损耗相对较低的SOI脊形波导.
metadata_83中国科学院半导体研究所
Subject Area微电子学
Funding Organization国家自然科学基金,国家重点基础研究发展规划,国家高技术研究发展计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:1799989
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17279
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
樊中朝,余金中,陈少武,等. ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响[J]. 半导体学报,2004,25(11):1500-1504.
APA 樊中朝,余金中,陈少武,杨笛,严清峰,&王良臣.(2004).ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响.半导体学报,25(11),1500-1504.
MLA 樊中朝,et al."ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响".半导体学报 25.11(2004):1500-1504.
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