SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模
王勇刚; 马骁宇; 付圣贵; 范万德; 李强; 袁树忠; 董孝义; 宋晏蓉; 张志刚
2004
Source Publication物理学报
Volume53Issue:6Pages:1810-1814
Abstract用离子注入的半绝缘GaAs晶片作为吸收体和输出镜,在双包层掺镱光纤激光器上实现了调Q锁模.离子注入的能量为400keV的As+离子,注入剂量为1016/cm2,然后在600℃下退火20min.当抽运功率为5W时,脉冲平均输出功率为200mW,调Q包络重复频率为50kHz,半高宽为4μs,锁模脉冲重复频率为15MHz。
metadata_83中国科学院半导体研究所;南开大学现代光学研究所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:1811355
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17257
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王勇刚,马骁宇,付圣贵,等. 离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模[J]. 物理学报,2004,53(6):1810-1814.
APA 王勇刚.,马骁宇.,付圣贵.,范万德.,李强.,...&张志刚.(2004).离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模.物理学报,53(6),1810-1814.
MLA 王勇刚,et al."离子注入GaAs实现双包层掺镱光纤激光器被动调Q锁模".物理学报 53.6(2004):1810-1814.
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