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Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method
Li Baoxia; Hu Xiaohua; Zhu Hongliang; Wang Baojun; Zhao Lingjuan; Wang Wei
2004
Source PublicationChinese Optics Letters
Volume2Issue:4Pages:226-228
AbstractAn improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser. The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW, and static extinction ratio of -7 dB at the applied bias voltage from 0.5 to -2.0 V.
metadata_83中科院半导体所national center of optoelectronics technology
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:1842627
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17253
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Baoxia,Hu Xiaohua,Zhu Hongliang,et al. Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method[J]. Chinese Optics Letters,2004,2(4):226-228.
APA Li Baoxia,Hu Xiaohua,Zhu Hongliang,Wang Baojun,Zhao Lingjuan,&Wang Wei.(2004).Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method.Chinese Optics Letters,2(4),226-228.
MLA Li Baoxia,et al."Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method".Chinese Optics Letters 2.4(2004):226-228.
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