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Design and numerical analysis for low birefringence silica on silicon waveguides
An Junming; Li Jian; Gao Dingshan; Xia Junlei; Li Jianguang; Wang Hongjie; Hu xiongwei
2004
Source PublicationChinese Optics Letters
Volume2Issue:8Pages:456-458
AbstractA new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented. Using this method, a silicon layer is left at the side of waveguide. The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method, respectively. The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.
metadata_83r&d center of optoelectonics, institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:1843112
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17251
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
An Junming,Li Jian,Gao Dingshan,et al. Design and numerical analysis for low birefringence silica on silicon waveguides[J]. Chinese Optics Letters,2004,2(8):456-458.
APA An Junming.,Li Jian.,Gao Dingshan.,Xia Junlei.,Li Jianguang.,...&Hu xiongwei.(2004).Design and numerical analysis for low birefringence silica on silicon waveguides.Chinese Optics Letters,2(8),456-458.
MLA An Junming,et al."Design and numerical analysis for low birefringence silica on silicon waveguides".Chinese Optics Letters 2.8(2004):456-458.
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