SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Binding Energy of Biexcitons in GaAs Quantum-Well Wires
Liu Jianjun; Chen Xiaofang; Li Shushen
2004
Source PublicationChinese Physics Letters
Volume21Issue:11Pages:2259-2262
AbstractThe binding energy of a biexciton in GaAs quantum-well wires is calculated variationally by use of a two-parameter trial wavefunction and a one-dimensional equivalent potential model. There is no artificial parameter added in our calculation. Our results agree fairly well with the previous results. It is found that the binding energies are closely correlative to the size of wire. The binding energy of biexcitons is smaller than that of neutral bound excitons in GaAs quantum-well wires when the dopant is located at the centre of the wires.
metadata_83college of physics, hebei normal university;中科院半导体所
Subject Area半导体物理
Funding OrganizationHebei Natural science Foundation under Grant,the Natural Science Foundation of Hebei Educational Committee under Grant
Indexed ByCSCD
Language英语
CSCD IDCSCD:1843315
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17247
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liu Jianjun,Chen Xiaofang,Li Shushen. Binding Energy of Biexcitons in GaAs Quantum-Well Wires[J]. Chinese Physics Letters,2004,21(11):2259-2262.
APA Liu Jianjun,Chen Xiaofang,&Li Shushen.(2004).Binding Energy of Biexcitons in GaAs Quantum-Well Wires.Chinese Physics Letters,21(11),2259-2262.
MLA Liu Jianjun,et al."Binding Energy of Biexcitons in GaAs Quantum-Well Wires".Chinese Physics Letters 21.11(2004):2259-2262.
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