SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs
Wang Yonggang; Ma xiaoyu; Zhong Bin; Wang Desong; Zhang Qiulin; Feng Baohua
2004
Source PublicationChinese Optics Letters
Volume2Issue:1Pages:31-33
AbstractWe reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.
metadata_83institute of semiconductors, chinese academy of sciences;institute of physics, chinese academy of sciences
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:1845000
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17243
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Yonggang,Ma xiaoyu,Zhong Bin,et al. Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs[J]. Chinese Optics Letters,2004,2(1):31-33.
APA Wang Yonggang,Ma xiaoyu,Zhong Bin,Wang Desong,Zhang Qiulin,&Feng Baohua.(2004).Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs.Chinese Optics Letters,2(1),31-33.
MLA Wang Yonggang,et al."Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs".Chinese Optics Letters 2.1(2004):31-33.
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