SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High power AlGaInP laser diodes with zinc-diffused window mirror structure
Yun Xu; Qing Cao; Xiaopeng Zhu; Guohua Yang; Qiaoqiang Gan; Guofeng Song; Liang Guo; Yuzhang Li; Lianghui Chen
2004
Source PublicationChinese Optics Letters
Volume2Issue:11Pages:647-649
AbstractThe technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:1845404
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17241
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yun Xu,Qing Cao,Xiaopeng Zhu,et al. High power AlGaInP laser diodes with zinc-diffused window mirror structure[J]. Chinese Optics Letters,2004,2(11):647-649.
APA Yun Xu.,Qing Cao.,Xiaopeng Zhu.,Guohua Yang.,Qiaoqiang Gan.,...&Lianghui Chen.(2004).High power AlGaInP laser diodes with zinc-diffused window mirror structure.Chinese Optics Letters,2(11),647-649.
MLA Yun Xu,et al."High power AlGaInP laser diodes with zinc-diffused window mirror structure".Chinese Optics Letters 2.11(2004):647-649.
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