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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: High power AlGaInP laser diodes with zinc-diffused window mirror structure
作者: Yun Xu;  Qing Cao;  Xiaopeng Zhu;  Guohua Yang;  Qiaoqiang Gan;  Guofeng Song;  Liang Guo;  Yuzhang Li;  Lianghui Chen
发表日期: 2004
摘要: The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.
刊名: Chinese Optics Letters
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yun Xu;Qing Cao;Xiaopeng Zhu;Guohua Yang;Qiaoqiang Gan;Guofeng Song;Liang Guo;Yuzhang Li;Lianghui Chen.High power AlGaInP laser diodes with zinc-diffused window mirror structure,Chinese Optics Letters,2004,2(11):647-649
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