SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator
Wang Zhaotao; Fan Zhongcao; Chen Shaowu; Yu Jinzhong
2004
Source PublicationSemiconductor Photonics and Technology
Volume10Issue:2Pages:78-81
AbstractThe simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.
metadata_83中科院半导体所
Subject Area光电子学
Funding OrganizationNational Natural Science Foundation of China,National"973"Project
Indexed ByCSCD
Language英语
CSCD IDCSCD:1845677
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17239
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Zhaotao,Fan Zhongcao,Chen Shaowu,et al. Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator[J]. Semiconductor Photonics and Technology,2004,10(2):78-81.
APA Wang Zhaotao,Fan Zhongcao,Chen Shaowu,&Yu Jinzhong.(2004).Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator.Semiconductor Photonics and Technology,10(2),78-81.
MLA Wang Zhaotao,et al."Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator".Semiconductor Photonics and Technology 10.2(2004):78-81.
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