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Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum
Wang Shurong; Zhu Hongliang; Liu Zhihong; Zhang Ruiying; Ding Ying; Zhao Lingjuan; Zhou Fan; Bian Jing; Wang Lufeng; Wang Wei
2004
Source PublicationChinese Optics Letters
Volume2Issue:6Pages:359-361
AbstractA kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.
metadata_83center of optoelectronics research & development, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1846644
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17233
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Shurong,Zhu Hongliang,Liu Zhihong,et al. Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum[J]. Chinese Optics Letters,2004,2(6):359-361.
APA Wang Shurong.,Zhu Hongliang.,Liu Zhihong.,Zhang Ruiying.,Ding Ying.,...&Wang Wei.(2004).Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum.Chinese Optics Letters,2(6),359-361.
MLA Wang Shurong,et al."Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum".Chinese Optics Letters 2.6(2004):359-361.
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