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Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum | |
Wang Shurong; Zhu Hongliang; Liu Zhihong; Zhang Ruiying; Ding Ying; Zhao Lingjuan; Zhou Fan; Bian Jing; Wang Lufeng; Wang Wei | |
2004 | |
Source Publication | Chinese Optics Letters
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Volume | 2Issue:6Pages:359-361 |
Abstract | A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively. |
metadata_83 | center of optoelectronics research & development, institute of semiconductors, chinese academy of sciences |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:1846644 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/17233 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Wang Shurong,Zhu Hongliang,Liu Zhihong,et al. Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum[J]. Chinese Optics Letters,2004,2(6):359-361. |
APA | Wang Shurong.,Zhu Hongliang.,Liu Zhihong.,Zhang Ruiying.,Ding Ying.,...&Wang Wei.(2004).Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum.Chinese Optics Letters,2(6),359-361. |
MLA | Wang Shurong,et al."Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum".Chinese Optics Letters 2.6(2004):359-361. |
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