SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Design and Realization of Resonant Tunneling Diodes with New Material Structure
Wang Jianlin; Wang Liangchen; Zeng Yiping; Liu Zhongli; Yang Fuhua; Bai Yunxia
2005
Source Publication半导体学报
Volume26Issue:1Pages:1-5
AbstractA new material structure with Al0.22Ga(>. 78 As/Ino.i5 Gao.ss As/GaAs emitter spacer layer and GaAs/Ino.15-Gao.8ii As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed. Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.
metadata_83microelectronics r&d center, institute of semiconductors, chinese academy of sciences;optoelectronic r&d center, institute of semiconductors, chinese academy of sciences;novel material department, institute oj semiconductors, chinese academy of sciences;institute of semiconductors, chinese academy of sciences
Subject Area微电子学
Funding Organization国家重点基础研究专项经费,中国科学院资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:1870395
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17207
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Jianlin,Wang Liangchen,Zeng Yiping,et al. Design and Realization of Resonant Tunneling Diodes with New Material Structure[J]. 半导体学报,2005,26(1):1-5.
APA Wang Jianlin,Wang Liangchen,Zeng Yiping,Liu Zhongli,Yang Fuhua,&Bai Yunxia.(2005).Design and Realization of Resonant Tunneling Diodes with New Material Structure.半导体学报,26(1),1-5.
MLA Wang Jianlin,et al."Design and Realization of Resonant Tunneling Diodes with New Material Structure".半导体学报 26.1(2005):1-5.
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