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Novel electroabsorption modulator monolithically integrated with spot-size converter
Hou Lianping; Wang Wei; Zhu Hongliang
2005
Source PublicationChinese Optics Letters
Volume3Issue:1Pages:49-52
AbstractA novel 1.55-μm spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100 μm) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2 deg. and 13.0 deg., respectively.
metadata_83national research center for optoelectronic technology,institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1876817
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17189
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Hou Lianping,Wang Wei,Zhu Hongliang. Novel electroabsorption modulator monolithically integrated with spot-size converter[J]. Chinese Optics Letters,2005,3(1):49-52.
APA Hou Lianping,Wang Wei,&Zhu Hongliang.(2005).Novel electroabsorption modulator monolithically integrated with spot-size converter.Chinese Optics Letters,3(1),49-52.
MLA Hou Lianping,et al."Novel electroabsorption modulator monolithically integrated with spot-size converter".Chinese Optics Letters 3.1(2005):49-52.
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