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异质外延立方氮化硼薄膜的微结构研究
张兴旺; 陈诺夫; Boyen H-G; Ziemann P
2005
Source Publication电子显微学报
Volume24Issue:1Pages:23-28
Abstract利用离子束辅助沉积技术在金刚石薄膜衬底上制备立方氮化硼薄膜,傅立叶变换红外谱的结果表明,在高度(001)织构金刚石薄膜衬底上沉积的立方氮化硼薄膜是纯的立方相,而在多晶金刚石薄膜衬底上制备的立方氮化硼薄膜中还含少量的六角氮化硼.高分辨透射电镜的分析表明,在金刚石晶粒上异质外延的c-BN直接成核于金刚石衬底,界面没有六角氮化硼过渡层;而在含有大量缺陷的晶粒边界,存在六角氮化硼的成核与生长.
metadata_83中国科学院半导体研究所;Department of Solid State Physics,Ulm Universit;Department of Solid State Physics,Ulm University
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目,中国科学院百人计划,教育部留学回国人员科研启动基金,国家重点基础研究专项经费
Indexed ByCSCD
Language中文
CSCD IDCSCD:1906384
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17175
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张兴旺,陈诺夫,Boyen H-G,等. 异质外延立方氮化硼薄膜的微结构研究[J]. 电子显微学报,2005,24(1):23-28.
APA 张兴旺,陈诺夫,Boyen H-G,&Ziemann P.(2005).异质外延立方氮化硼薄膜的微结构研究.电子显微学报,24(1),23-28.
MLA 张兴旺,et al."异质外延立方氮化硼薄膜的微结构研究".电子显微学报 24.1(2005):23-28.
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