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GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器
周震; 杨晓红; 韩勤; 杜云; 彭红玲; 吴荣汉; 黄永清; 任晓敏
2005
Source Publication光电子·激光
Volume16Issue:2Pages:159-163
Abstract报道了一种具有高速响应特性的GaAs基长波长谐振强增强型(RCE)光探测器,它采用分子束外延技术(MBE)在GaAs衬底上直接生长GaAs/AlAs布拉格反射镜(DBR)和GaInNAs/GaAs多量子阱吸收层而形成,解决了GaAs系材料只能对短波长光响应的问题,实现了GaAs基探测器对长波长光的响应.该器件在峰值响应波长1 296.5 nm处获得了17.4%的量子效率,响应谱线半宽为11 nm,零偏置时的暗电流密度8.74×10-15 A/μm~2,具有良好的暗电流特性.通过RC常数测量计算得到器件的3 dB带宽为4.82 GHz.
metadata_83北京邮电大学光通信中心;中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家"847"计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1914950
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17161
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周震,杨晓红,韩勤,等. GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器[J]. 光电子·激光,2005,16(2):159-163.
APA 周震.,杨晓红.,韩勤.,杜云.,彭红玲.,...&任晓敏.(2005).GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器.光电子·激光,16(2),159-163.
MLA 周震,et al."GaAs/GaInNAs多量子阱谐振腔增强型长波长光探测器".光电子·激光 16.2(2005):159-163.
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