SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
AlGaN/GaN HEMT电流崩塌效应研究进展
王翠梅; 王晓亮; 王军喜
2005
Source Publication固体电子学研究与进展
Volume25Issue:1Pages:35-41
Abstract简要回顾了AlGaN/GaN HEMT器件电流崩塌效应研究的进展,着重阐述了虚栅模型、应力模型等几种解释电流崩塌效应形成机理的模型和器件钝化、生长盖帽层等减小电流崩塌效应的措施.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization中科院创新工程重要方向性项目经费,国家自然科学基金重点项目,"973"项目,"863"项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1918268
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17155
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王翠梅,王晓亮,王军喜. AlGaN/GaN HEMT电流崩塌效应研究进展[J]. 固体电子学研究与进展,2005,25(1):35-41.
APA 王翠梅,王晓亮,&王军喜.(2005).AlGaN/GaN HEMT电流崩塌效应研究进展.固体电子学研究与进展,25(1),35-41.
MLA 王翠梅,et al."AlGaN/GaN HEMT电流崩塌效应研究进展".固体电子学研究与进展 25.1(2005):35-41.
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