SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
Mao Rongwei; Zuo Yuhua; Li Chuanbo; Cheng Buwen; Teng Xuegong; Luo Liping; Zhang Heshun; Yu Jinzhong; Wang Qiming
2005
Source Publication半导体学报
Volume26Issue:2Pages:271-275
AbstractA novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
metadata_83institute of semiconductors, chinese academy of sciences;beijing chemical plant
Subject Area光电子学
Funding Organization国家重点基础研究发展规划,国家自然科学基金,国家高技术研究发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:1922366
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17143
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Mao Rongwei,Zuo Yuhua,Li Chuanbo,et al. Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors[J]. 半导体学报,2005,26(2):271-275.
APA Mao Rongwei.,Zuo Yuhua.,Li Chuanbo.,Cheng Buwen.,Teng Xuegong.,...&Wang Qiming.(2005).Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors.半导体学报,26(2),271-275.
MLA Mao Rongwei,et al."Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors".半导体学报 26.2(2005):271-275.
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