Knowledge Management System Of Institute of Semiconductors,CAS
| Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors | |
Mao Rongwei; Zuo Yuhua ; Li Chuanbo; Cheng Buwen; Teng Xuegong; Luo Liping; Zhang Heshun; Yu Jinzhong; Wang Qiming
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| 2005 | |
| Source Publication | 半导体学报
 |
| Volume | 26Issue:2Pages:271-275 |
| Abstract | A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes. |
| metadata_83 | institute of semiconductors, chinese academy of sciences;beijing chemical plant |
| Subject Area | 光电子学 |
| Funding Organization | 国家重点基础研究发展规划,国家自然科学基金,国家高技术研究发展计划 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:1922366 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17143 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Mao Rongwei,Zuo Yuhua,Li Chuanbo,et al. Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors[J]. 半导体学报,2005,26(2):271-275. |
| APA | Mao Rongwei.,Zuo Yuhua.,Li Chuanbo.,Cheng Buwen.,Teng Xuegong.,...&Wang Qiming.(2005).Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors.半导体学报,26(2),271-275. |
| MLA | Mao Rongwei,et al."Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors".半导体学报 26.2(2005):271-275. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4561.pdf（230KB） | 限制开放 | -- | Application Full Text | |||
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