Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
	Mao Rongwei; Zuo Yuhua; Li Chuanbo; Cheng Buwen; Teng Xuegong; Luo Liping; Zhang Heshun; Yu Jinzhong; Wang Qiming
	2005
Source Publication	半导体学报
Volume	26 Issue:2 Pages:271-275
Abstract	A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
metadata_83	institute of semiconductors, chinese academy of sciences;beijing chemical plant
Subject Area	光电子学
Funding Organization	国家重点基础研究发展规划,国家自然科学基金,国家高技术研究发展计划
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:1922366
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17143
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Mao Rongwei,Zuo Yuhua,Li Chuanbo,et al. Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors[J]. 半导体学报,2005,26(2):271-275.
APA	Mao Rongwei.,Zuo Yuhua.,Li Chuanbo.,Cheng Buwen.,Teng Xuegong.,...&Wang Qiming.(2005).Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors.半导体学报,26(2),271-275.
MLA	Mao Rongwei,et al."Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors".半导体学报 26.2(2005):271-275.

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