SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes
Yang Hui; Chen Lianghui; Zhang Shuming; Chong Ming; Zhu Jianjun; Zhao Degang; Ye Xiaojun; Li Deyao; Liu Zongshun; Duan Lihong; Zhao Wei; Wang Hai; Shi Yongsheng; Cao Qing; Sun Jie; Chen Jun; Liu Suying; Jin Ruiqin; Liang Junwu
2005
Source Publication半导体学报
Volume26Issue:2Pages:414-417
AbstractStudies on first GaN-based blue-violet laser diodes(LDs) in China mainland are reported.High quality GaN materials as well as GaN-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.A room temperature mobility of 850cm2/(V·s) is obtained for a 3μm thick GaN film.Gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.The lasing wavelength is 405.9nm.A threshold current density of 5kA/cm2 and an output light power over 100mW are obtained for ridge geometry waveguide laser diodes.
metadata_83institute of semiconductors, chinese academy of sciences;中科院半导体所
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:1922637
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17129
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yang Hui,Chen Lianghui,Zhang Shuming,et al. Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes[J]. 半导体学报,2005,26(2):414-417.
APA Yang Hui.,Chen Lianghui.,Zhang Shuming.,Chong Ming.,Zhu Jianjun.,...&Liang Junwu.(2005).Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes.半导体学报,26(2),414-417.
MLA Yang Hui,et al."Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes".半导体学报 26.2(2005):414-417.
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