SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer
Deng Jiajun; Zhao Jianhua; Jiang Chunping; Zhang Yan; Niu Zhichuan; Yang Fuhua; Wu Xiaoguang; Zheng Houzhi
2005
Source PublicationChinese Physics Letters
Volume22Issue:2Pages:466-468
AbstractWe investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and find a dramatic increase of the Curie temperature from 65 to 115 K by postgrowth annealing for a 500-nm (Ga,Mn)As layer. Auger electron spectroscopy measurements suggest that the increase of the Curie temperature is mainly due to diffusion of Mn interstitial to the free surface. The double-crystal x-ray diffraction patterns show that the lattice constant of (Ga,Mn)As decreases with increasing annealing temperature. As a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of Mn interstitial.
metadata_83institute of semiconductors, chinese academy of sciences, po box 912;school of physics, peking university
Subject Area半导体物理
Funding OrganizationSupported by the National Natural Science Foundaiton of China,Special Funds for Major State Basic Research Project of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:1952284
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17125
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Deng Jiajun,Zhao Jianhua,Jiang Chunping,et al. Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer[J]. Chinese Physics Letters,2005,22(2):466-468.
APA Deng Jiajun.,Zhao Jianhua.,Jiang Chunping.,Zhang Yan.,Niu Zhichuan.,...&Zheng Houzhi.(2005).Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer.Chinese Physics Letters,22(2),466-468.
MLA Deng Jiajun,et al."Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer".Chinese Physics Letters 22.2(2005):466-468.
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