SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission
Kong Lingmin; Cai Jiafa; Wu Zhengyun; Gong Zheng; Niu Zhichuan
2005
Source PublicationSemiconductor Photonics and Technology
Volume11Issue:2Pages:78-80
AbstractThe time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48 μtm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers,which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.
metadata_83dept. of phys., xiamen university;institute of semicondutors, cass
Subject Area半导体物理
Funding OrganizationNatural Science Foundation of Fujian Province
Indexed ByCSCD
Language英语
CSCD IDCSCD:1954035
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17121
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Kong Lingmin,Cai Jiafa,Wu Zhengyun,et al. Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission[J]. Semiconductor Photonics and Technology,2005,11(2):78-80.
APA Kong Lingmin,Cai Jiafa,Wu Zhengyun,Gong Zheng,&Niu Zhichuan.(2005).Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission.Semiconductor Photonics and Technology,11(2),78-80.
MLA Kong Lingmin,et al."Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission".Semiconductor Photonics and Technology 11.2(2005):78-80.
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