SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process
Hou Lianping; Wang Wei; Zhu Hongliang
2005
Source Publication半导体学报
Volume26Issue:3Pages:443-447
AbstractA novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).
metadata_83national research center for optoelectronic technology,institute of semiconductors,chinese academy of sciences
Subject Area半导体材料
Funding Organization国家自然科学基金重大研究计划,国家重点基础研究发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:1957974
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17119
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Hou Lianping,Wang Wei,Zhu Hongliang. 1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process[J]. 半导体学报,2005,26(3):443-447.
APA Hou Lianping,Wang Wei,&Zhu Hongliang.(2005).1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process.半导体学报,26(3),443-447.
MLA Hou Lianping,et al."1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process".半导体学报 26.3(2005):443-447.
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