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MOCVD生长Mg掺杂GaN的退火研究
冉军学; 王晓亮; 胡国新; 王军喜; 李建平; 曾一平; 李晋闽
2005
Source Publication半导体学报
Volume26Issue:3Pages:494-497
Abstract用MOCVD技术在50mm蓝宝石衬底(0001)面上生长了GaN∶Mg外延膜,对样品进行热退火处理并作了Hall、双晶X射线衍射(DCXRD)和室温光致发光谱(PL)测试.Hall测试结果表明,950℃退火后空穴浓度达到5×1017cm-3以上,电阻率降到2.5Ω·cm;(0002)面DCXRD测试发现样品退火前、后的半峰宽均约为4′;室温PL谱中发光峰位于2.85eV处,退火后峰的强度比退火前增强了8倍以上,表明样品中大量被H钝化的受主Mg原子在退火后被激活.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划,国家高技术研究发展计划,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:1958045
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17115
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
冉军学,王晓亮,胡国新,等. MOCVD生长Mg掺杂GaN的退火研究[J]. 半导体学报,2005,26(3):494-497.
APA 冉军学.,王晓亮.,胡国新.,王军喜.,李建平.,...&李晋闽.(2005).MOCVD生长Mg掺杂GaN的退火研究.半导体学报,26(3),494-497.
MLA 冉军学,et al."MOCVD生长Mg掺杂GaN的退火研究".半导体学报 26.3(2005):494-497.
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