SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs量子级联激光器
刘俊岐; 路秀真; 郭瑜; 刘峰奇; 王占国
2005
Source Publication半导体学报
Volume26Issue:3Pages:624-626
Abstract利用分子束外延方法生长了激射波长约为9μm的GaAs/Al0.45Ga0.55As量子级联激光器.条宽35μm,腔长2mm的器件准连续激射温度最高达120K,81K下未经收集效率修正的峰值功率超过70mW.
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家高技术研究发展计划,国家重点基础研究发展规划
Indexed ByCSCD
Language中文
CSCD IDCSCD:1958298
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17109
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘俊岐,路秀真,郭瑜,等. GaAs/AlGaAs量子级联激光器[J]. 半导体学报,2005,26(3):624-626.
APA 刘俊岐,路秀真,郭瑜,刘峰奇,&王占国.(2005).GaAs/AlGaAs量子级联激光器.半导体学报,26(3),624-626.
MLA 刘俊岐,et al."GaAs/AlGaAs量子级联激光器".半导体学报 26.3(2005):624-626.
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