SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate
Shen Xiaoming; Wang Yutian; Wang Jianfeng; Liu Jianping; Zhang Jicai; Guo Liping; Jia Quanjie; Jiang Xiaoming; Hu Zhengfei; Yang Hui; Liang Junwu
Source Publication半导体学报
metadata_83institute of semiconductor and information technology, tongji university;institute of semiconductors , chinese academy of sciences;beijing synchrotron radiation facility, institute of high energy physics, chinese academy of sciences
Other AbstractGaN buffer layers (thickness ~60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.
Subject Area半导体器件
Funding Organization国家博士后科学基金,国家自然科学基金
Indexed ByCSCD
Date Available2010-11-23
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Document Type期刊论文
Recommended Citation
GB/T 7714
Shen Xiaoming,Wang Yutian,Wang Jianfeng,et al. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报,2005,26(4):645-650.
APA Shen Xiaoming.,Wang Yutian.,Wang Jianfeng.,Liu Jianping.,Zhang Jicai.,...&Liang Junwu.(2005).Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate.半导体学报,26(4),645-650.
MLA Shen Xiaoming,et al."Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate".半导体学报 26.4(2005):645-650.
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