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Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate | |
Shen Xiaoming; Wang Yutian![]() | |
2005 | |
Source Publication | 半导体学报
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Volume | 26Issue:4Pages:645-650 |
metadata_83 | institute of semiconductor and information technology, tongji university;institute of semiconductors , chinese academy of sciences;beijing synchrotron radiation facility, institute of high energy physics, chinese academy of sciences |
Other Abstract | GaN buffer layers (thickness ~60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets. |
Subject Area | 半导体器件 |
Funding Organization | 国家博士后科学基金,国家自然科学基金 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:2004006 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/17081 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Shen Xiaoming,Wang Yutian,Wang Jianfeng,et al. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报,2005,26(4):645-650. |
APA | Shen Xiaoming.,Wang Yutian.,Wang Jianfeng.,Liu Jianping.,Zhang Jicai.,...&Liang Junwu.(2005).Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate.半导体学报,26(4),645-650. |
MLA | Shen Xiaoming,et al."Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate".半导体学报 26.4(2005):645-650. |
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