Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

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	Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate
	Shen Xiaoming; Wang Yutian; Wang Jianfeng; Liu Jianping; Zhang Jicai; Guo Liping; Jia Quanjie; Jiang Xiaoming; Hu Zhengfei; Yang Hui; Liang Junwu
	2005
Source Publication	半导体学报
Volume	26 Issue:4 Pages:645-650
metadata_83	institute of semiconductor and information technology, tongji university;institute of semiconductors , chinese academy of sciences;beijing synchrotron radiation facility, institute of high energy physics, chinese academy of sciences
Other Abstract	GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.
Subject Area	半导体器件
Funding Organization	国家博士后科学基金,国家自然科学基金
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:2004006
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17081
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Shen Xiaoming,Wang Yutian,Wang Jianfeng,et al. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报,2005,26(4):645-650.
APA	Shen Xiaoming.,Wang Yutian.,Wang Jianfeng.,Liu Jianping.,Zhang Jicai.,...&Liang Junwu.(2005).Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate.半导体学报,26(4),645-650.
MLA	Shen Xiaoming,et al."Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate".半导体学报 26.4(2005):645-650.

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