SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Bandwidth Design for CMOS Monolithic Photoreceiver
Nian Hua; Mao Luhong; Li Wei; Chen Hongda; Jia Jiuchun
2005
Source Publication半导体学报
Volume26Issue:4Pages:677-682
AbstractA monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade(RGC) transimpedance amplifier (TIA) is designed. The small signal circuit model of DPD is given and the band width design method of a monolithic photoreceiver is presented. An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail. A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0. 6um CMOS process and the test result is given.
metadata_83school of electronic and information engineering, tianjin university;institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2004031
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17079
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Nian Hua,Mao Luhong,Li Wei,et al. Bandwidth Design for CMOS Monolithic Photoreceiver[J]. 半导体学报,2005,26(4):677-682.
APA Nian Hua,Mao Luhong,Li Wei,Chen Hongda,&Jia Jiuchun.(2005).Bandwidth Design for CMOS Monolithic Photoreceiver.半导体学报,26(4),677-682.
MLA Nian Hua,et al."Bandwidth Design for CMOS Monolithic Photoreceiver".半导体学报 26.4(2005):677-682.
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