SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
注氮工艺对SIMOX器件电特性的影响
张国强; 刘忠立; 李宁; 范楷; 郑中山; 张恩霞; 易万兵; 陈猛; 王曦
2005
Source Publication半导体学报
Volume26Issue:4Pages:835-839
Abstract研究了氮离子注入对SIMOX器件电特性的影响.氮注入SIMOX的埋氧层并退火后,将减小前栅MOS-FET/SIMOX的阈电压,提高其漏源击穿电压但对栅击穿电压影响较小.氮注入方式对SIMOX器件的I-V特性有重要影响.
metadata_83中国科学院半导体研究所;中国科学院上海微系统与信息技术研究所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:2004122
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17069
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张国强,刘忠立,李宁,等. 注氮工艺对SIMOX器件电特性的影响[J]. 半导体学报,2005,26(4):835-839.
APA 张国强.,刘忠立.,李宁.,范楷.,郑中山.,...&王曦.(2005).注氮工艺对SIMOX器件电特性的影响.半导体学报,26(4),835-839.
MLA 张国强,et al."注氮工艺对SIMOX器件电特性的影响".半导体学报 26.4(2005):835-839.
Files in This Item:
File Name/Size DocType Version Access License
4517.pdf(224KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[张国强]'s Articles
[刘忠立]'s Articles
[李宁]'s Articles
Baidu academic
Similar articles in Baidu academic
[张国强]'s Articles
[刘忠立]'s Articles
[李宁]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[张国强]'s Articles
[刘忠立]'s Articles
[李宁]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.