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带有锥形增益区14xxnm量子阱激光器的研制
张洪波; 韦欣; 朱晓鹏; 王国宏; 张敬明; 马骁宇
2005
Source Publication光子学报
Volume34Issue:4Pages:496-498
Abstract利用MOCVD生长了14xxnm AlGaInAs/AlInAs/InP应变量子阱外延片.采用带有锥形增益区脊型波导结构和普通条形脊型波导结构在相同的实验条件下制作800μm腔长激光器管芯,在相同的驱动电流下前者可以获得更高的输出光功率,而且P-Ⅰ曲线线性度较好、饱和电流高.1200μm腔长带有锥形增益区脊型波导结构管芯功率达到500mW,饱和电流3A以上,峰值波长1460nm,远场发散角为39°×11°.
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2026186
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17049
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张洪波,韦欣,朱晓鹏,等. 带有锥形增益区14xxnm量子阱激光器的研制[J]. 光子学报,2005,34(4):496-498.
APA 张洪波,韦欣,朱晓鹏,王国宏,张敬明,&马骁宇.(2005).带有锥形增益区14xxnm量子阱激光器的研制.光子学报,34(4),496-498.
MLA 张洪波,et al."带有锥形增益区14xxnm量子阱激光器的研制".光子学报 34.4(2005):496-498.
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