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In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点
方志丹; 龚政; 苗振华; 牛智川; 沈光地
2005
Source Publication红外与毫米波学报
Volume24Issue:5Pages:324-327
Abstract用光荧光谱和原子力显微镜测试技术系统研究了在2 nm In0.2Ga0.8As和x ML GaAs的复合应力缓冲层上生长的InAs/GaAs自组织量子点的发光特性和表面形貌.采用In0.2Ga0.8As与薄层GaAs复合的应力缓冲层,由于减少了晶格失配度致使量子点密度从约1.7×109 cm-2显著增加到约3.8×109cm-2.同时,复合层也有利于提高量子点中In的组份,使量子点的高宽比增加,促进量子点发光峰红移.对于x=10 ML的样品室温下基态发光峰达到1350 nm.
metadata_83北京工业大学;中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家高技术研究发展技术资助的课题
Indexed ByCSCD
Language中文
CSCD IDCSCD:2028843
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17035
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
方志丹,龚政,苗振华,等. In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点[J]. 红外与毫米波学报,2005,24(5):324-327.
APA 方志丹,龚政,苗振华,牛智川,&沈光地.(2005).In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点.红外与毫米波学报,24(5),324-327.
MLA 方志丹,et al."In0.2 Ga0.8 As-GaAs复合应力缓冲层上的1.3 μmInAs/GaAs自组织量子点".红外与毫米波学报 24.5(2005):324-327.
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