Knowledge Management System Of Institute of Semiconductors,CAS
| Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides | |
| Zheng Zhongshan; Liu Zhongli; Zhang Guoqiang; Li Ning; Li Guohua; Ma Hongzhi; Zhang Enxia; Zhang Zhengxuan; Wang Xi | |
| 2005 | |
| Source Publication | 半导体学报
 |
| Volume | 26Issue:5Pages:862-866 |
| Abstract | In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained. |
| metadata_83 | microelectronics r&d center, institute of semiconductors, chinese academy of sciences;shanghai institute of microsystem and information technology, chinese academy of sciences |
| Subject Area | 微电子学 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:2033997 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17023 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Zheng Zhongshan,Liu Zhongli,Zhang Guoqiang,et al. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. 半导体学报,2005,26(5):862-866. |
| APA | Zheng Zhongshan.,Liu Zhongli.,Zhang Guoqiang.,Li Ning.,Li Guohua.,...&Wang Xi.(2005).Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides.半导体学报,26(5),862-866. |
| MLA | Zheng Zhongshan,et al."Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides".半导体学报 26.5(2005):862-866. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4491.pdf（448KB） | 限制开放 | -- | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment