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水平冷壁CVD生长4H-SiC同质外延膜
高欣; 孙国胜; 李晋闽; 赵万顺; 王雷; 张永兴; 曾一平
2005
Source Publication半导体学报
Volume26Issue:5Pages:936-940
Abstract采用自行设计的水平冷壁低压化学气相沉积(LPCVD)方法在偏向〈1120〉晶向8°的n型4H-SiC(0001)衬底上进行了同质外延生长.在5.3×103Pa的低压下,外延膜生长速率超过3μm/h.电容-电压法测试表明在非有意掺杂外延膜中净施主浓度为8.4×10 15cm-3.Nomarski显微镜观察表明厚外延膜的表面光滑,生长缺陷密度很低.AFM测试显示表面均方根粗糙度为0.3nm,没有观察到宏观台阶结构.Raman谱线清晰锐利,表现出典型的4H-SiC特征.在低温PL谱中,近带边区域出现很强的自由激子峰,表明样品是高质量的.
metadata_83中国科学院半导体研究所材料中心;兰州大学物理学院
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:2034070
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17021
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
高欣,孙国胜,李晋闽,等. 水平冷壁CVD生长4H-SiC同质外延膜[J]. 半导体学报,2005,26(5):936-940.
APA 高欣.,孙国胜.,李晋闽.,赵万顺.,王雷.,...&曾一平.(2005).水平冷壁CVD生长4H-SiC同质外延膜.半导体学报,26(5),936-940.
MLA 高欣,et al."水平冷壁CVD生长4H-SiC同质外延膜".半导体学报 26.5(2005):936-940.
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