Knowledge Management System Of Institute of Semiconductors,CAS
| Optical Pr operties of GaNAs and GaAsSb Semiconductors | |
| Luo Xiangdong; Xu Zhongying | |
| 2005 | |
| Source Publication | 中国科学院研究生院学报
 |
| Volume | 22Issue:5Pages:645-655 |
| Abstract | Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time. |
| metadata_83 | 南通大学理学院;institute of semiconductors, chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | supported by the special funds of the Major State Basic Research Project,the National Natural Science Foundation of China,the Natural Science Foundation of Jiangsu |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:2039250 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17011 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Luo Xiangdong,Xu Zhongying. Optical Pr operties of GaNAs and GaAsSb Semiconductors[J]. 中国科学院研究生院学报,2005,22(5):645-655. |
| APA | Luo Xiangdong,&Xu Zhongying.(2005).Optical Pr operties of GaNAs and GaAsSb Semiconductors.中国科学院研究生院学报,22(5),645-655. |
| MLA | Luo Xiangdong,et al."Optical Pr operties of GaNAs and GaAsSb Semiconductors".中国科学院研究生院学报 22.5(2005):645-655. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4484.pdf（703KB） | 限制开放 | -- | Application Full Text | |||
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