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Optical Pr operties of GaNAs and GaAsSb Semiconductors
Luo Xiangdong; Xu Zhongying
2005
Source Publication中国科学院研究生院学报
Volume22Issue:5Pages:645-655
AbstractUnder short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x < 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.
metadata_83南通大学理学院;institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organizationsupported by the special funds of the Major State Basic Research Project,the National Natural Science Foundation of China,the Natural Science Foundation of Jiangsu
Indexed ByCSCD
Language英语
CSCD IDCSCD:2039250
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17011
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Luo Xiangdong,Xu Zhongying. Optical Pr operties of GaNAs and GaAsSb Semiconductors[J]. 中国科学院研究生院学报,2005,22(5):645-655.
APA Luo Xiangdong,&Xu Zhongying.(2005).Optical Pr operties of GaNAs and GaAsSb Semiconductors.中国科学院研究生院学报,22(5),645-655.
MLA Luo Xiangdong,et al."Optical Pr operties of GaNAs and GaAsSb Semiconductors".中国科学院研究生院学报 22.5(2005):645-655.
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