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低功率消耗、响应快速的SOI基可变光学衰减器
贺月娇; 方青; 辛红丽; 陈鹏; 李芳; 刘育梁
2005
Source Publication光电子·激光
Volume16Issue:6Pages:642-645
Abstract采用绝缘体上Si(SOI)材料制作了马赫-曾德干涉型(MZI)SOI热光可变光学衰减器(VOA),利用隔热槽有效降低器件的功率消耗,提高响应速度.在1 510~1 610 nm波长范围内动态调节范围可达到0~29 dB.与未加隔热槽的相同结构光学衰减器相比,器件插入损耗和调制深度不受影响.最大衰减(29 dB)时功率消耗由360 mW降低为130 mW,器件响应速度提高1倍,响应时间由大于100 μs降为小于50 μs.
metadata_83中国科学院半导体研究所,光电子研究发展中心
Subject Area光电子学
Funding Organization国家"863"计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2087913
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16989
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
贺月娇,方青,辛红丽,等. 低功率消耗、响应快速的SOI基可变光学衰减器[J]. 光电子·激光,2005,16(6):642-645.
APA 贺月娇,方青,辛红丽,陈鹏,李芳,&刘育梁.(2005).低功率消耗、响应快速的SOI基可变光学衰减器.光电子·激光,16(6),642-645.
MLA 贺月娇,et al."低功率消耗、响应快速的SOI基可变光学衰减器".光电子·激光 16.6(2005):642-645.
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