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氧化限制型垂直腔面发射激光器串联电阻分
佟存柱; 韩勤; 彭红玲; 牛智川; 吴荣汉
2005
Source Publication半导体学报
Volume26Issue:7Pages:1459-1463
Abstract含氧化限制孔的VCSEL具有低的阈值电流,但氧化孔的存在也会加大串联电阻.本文采用理论模型,详细计算了氧化限制型VCSEL的串联电阻.把串联电阻分解为垂直方向电阻和横向电阻,分析了串联电阻与氧化孔半径的关系,提出了降低VCSEL串联电阻的具体方法.
metadata_83中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家高技术研究发展计划,国家重点基础研究发展规划,国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2091228
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16979
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
佟存柱,韩勤,彭红玲,等. 氧化限制型垂直腔面发射激光器串联电阻分[J]. 半导体学报,2005,26(7):1459-1463.
APA 佟存柱,韩勤,彭红玲,牛智川,&吴荣汉.(2005).氧化限制型垂直腔面发射激光器串联电阻分.半导体学报,26(7),1459-1463.
MLA 佟存柱,et al."氧化限制型垂直腔面发射激光器串联电阻分".半导体学报 26.7(2005):1459-1463.
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