SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam
Zhou Zhen; Han Qin; Du Yun; Yang Xiaohong; Wu Ronghan; Huang Yongqing; Ren Xiaomin
2005
Source Publication半导体学报
Volume26Issue:6Pages:1087-1093
AbstractA GaAs-based micro-opto-electro-mech anical-systems(MOEMS) tunable resonant cavity enhanced(RCE)photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9 % and 30. 8 %, respectively. The maximum and minimum full-width-at-halfmaximum (FWHM) are 20nm and 14nm,respectively. The dark current density is 7.46A/m2 without bias.
metadata_83optical communication center, school of telecommunication engineering, beijing university of posts and telecommunications;institute of semiconductors,chinese academy of sciences
Subject Area光电子学
Funding Organization国家重点基础研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2091716
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16975
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhou Zhen,Han Qin,Du Yun,et al. A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam[J]. 半导体学报,2005,26(6):1087-1093.
APA Zhou Zhen.,Han Qin.,Du Yun.,Yang Xiaohong.,Wu Ronghan.,...&Ren Xiaomin.(2005).A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam.半导体学报,26(6),1087-1093.
MLA Zhou Zhen,et al."A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam".半导体学报 26.6(2005):1087-1093.
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