SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content
Wang Xiaoling; Wang Ciumei; Hu Guoxin; Wang Junxi; Liu Xinyu; Liu Jian; Ran Junxue; Qian He; Zeng Yiping; Li Jinmin
2005
Source Publication半导体学报
Volume26Issue:6Pages:1116-1120
AbstractA Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.
metadata_83institute of semiconductors, chinese academy of sciences;institute of microelectronics, chinese academy of sciences
Subject Area半导体材料
Funding Organization中国科学院知识创新工程,国家自然科学基金,国家重点基础研究发展规划,国家高技术研究发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:2091721
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16969
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaoling,Wang Ciumei,Hu Guoxin,et al. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content[J]. 半导体学报,2005,26(6):1116-1120.
APA Wang Xiaoling.,Wang Ciumei.,Hu Guoxin.,Wang Junxi.,Liu Xinyu.,...&Li Jinmin.(2005).RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content.半导体学报,26(6),1116-1120.
MLA Wang Xiaoling,et al."RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content".半导体学报 26.6(2005):1116-1120.
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