SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GSMBE外延生长SGOI材料的退火行为
刘超; 高兴国; 李建平; 曾一平; 李晋闽
2005
Source Publication半导体学报
Volume26Issue:6Pages:1149-1153
Abstract在SIMOX SOI超薄硅衬底上外延生长了高质量SiGe合金薄膜来制备SGOI(SiGe on insulator)样品,并研究了其在1050℃氧化气氛中的高温退火行为.用Raman,DCXRD,RBS和光学显微镜等分析手段对SGOI样品在退火前后的性能进行了表征.分析结果表明
metadata_83中国科学院半导体研究所材料中心
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2091728
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16965
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘超,高兴国,李建平,等. GSMBE外延生长SGOI材料的退火行为[J]. 半导体学报,2005,26(6):1149-1153.
APA 刘超,高兴国,李建平,曾一平,&李晋闽.(2005).GSMBE外延生长SGOI材料的退火行为.半导体学报,26(6),1149-1153.
MLA 刘超,et al."GSMBE外延生长SGOI材料的退火行为".半导体学报 26.6(2005):1149-1153.
Files in This Item:
File Name/Size DocType Version Access License
4461.pdf(378KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[刘超]'s Articles
[高兴国]'s Articles
[李建平]'s Articles
Baidu academic
Similar articles in Baidu academic
[刘超]'s Articles
[高兴国]'s Articles
[李建平]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[刘超]'s Articles
[高兴国]'s Articles
[李建平]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.