SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Modified Holographic Exposure to Fabricate Varied Bragg Grating in an Identical Chip
Xie Hongyun; Zhou Fan; Wang Baojun; Yang Hua; Zhu Hongliang; Zhao Lingjuan; Wang Wei
2005
Source Publication半导体学报
Volume26Issue:7Pages:1287-1290
AbstractA new fabricating method is demonstrated to realize two different Bragg gratings in an identical chip using traditional holographic exposure. Polyimide is used to protect one Bragg grating during the first period. The technical process of this method is as simple as that of standard holographic exposure
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家重点基础研究发展计划,国家自然科学基金,国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2091961
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16955
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xie Hongyun,Zhou Fan,Wang Baojun,et al. Modified Holographic Exposure to Fabricate Varied Bragg Grating in an Identical Chip[J]. 半导体学报,2005,26(7):1287-1290.
APA Xie Hongyun.,Zhou Fan.,Wang Baojun.,Yang Hua.,Zhu Hongliang.,...&Wang Wei.(2005).Modified Holographic Exposure to Fabricate Varied Bragg Grating in an Identical Chip.半导体学报,26(7),1287-1290.
MLA Xie Hongyun,et al."Modified Holographic Exposure to Fabricate Varied Bragg Grating in an Identical Chip".半导体学报 26.7(2005):1287-1290.
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