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Cu导线表面起伏程度对早期失效的影响
汪辉; 朱建军; 王国宏; C Bruynseraede; K Maex
2005
Source Publication电子学报
Volume33Issue:8Pages:1516-1518
Abstract使用两种化学机械抛光剂得到的单层大马士革Cu导线表面起伏程度不同.扫描电镜观察到明显的缺陷出现在大起伏的Cu导线表面.这种表面缺陷导致早期失效比率剧增至几乎100%、电迁移寿命猛降至早期失效的量级、失效时间分布从多模变为单模,其相应的失效机制激活能为0.744-0.02eV,这说明失效主要是由Cu原子沿导线表面扩散引起的.最弱链接近似被用来分析单根Cu导线
metadata_83上海交通大学微电子学院;中国科学院半导体研究所;IMEC, Kapeldreef 75;IMEC, Kapeldreef 75
Subject Area光电子学
Funding Organization上海市科委科研计划项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2097757
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16953
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
汪辉,朱建军,王国宏,等. Cu导线表面起伏程度对早期失效的影响[J]. 电子学报,2005,33(8):1516-1518.
APA 汪辉,朱建军,王国宏,C Bruynseraede,&K Maex.(2005).Cu导线表面起伏程度对早期失效的影响.电子学报,33(8),1516-1518.
MLA 汪辉,et al."Cu导线表面起伏程度对早期失效的影响".电子学报 33.8(2005):1516-1518.
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