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p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池
胡志华; 廖显伯; 刁宏伟; 夏朝凤; 曾湘波; 郝会颖; 孔光临
2005
Source Publication物理学报
Volume54Issue:6Pages:2945-2949
Abstract报道了选用厚度为0.05mm的不锈钢箔作衬底,B掺杂P型氢化纳米硅作窗口层,制备成功开路电压和填充因子分别达到0.90V和0.70的nip非晶硅基薄膜单结太阳电池.UV-VIS透射谱和微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征.明确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应.
metadata_83中国科学院半导体研究所;云南师范大学能源与环境科学学院,云南师范大学太阳能研究所
Subject Area半导体材料
Funding Organization国家重大基础研究计划(973)项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2104329
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16945
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
胡志华,廖显伯,刁宏伟,等. p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池[J]. 物理学报,2005,54(6):2945-2949.
APA 胡志华.,廖显伯.,刁宏伟.,夏朝凤.,曾湘波.,...&孔光临.(2005).p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池.物理学报,54(6),2945-2949.
MLA 胡志华,et al."p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池".物理学报 54.6(2005):2945-2949.
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