SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
非晶/微晶相变域硅薄膜及其太阳能电池
郝会颖; 孔光临; 曾湘波; 许颖; 刁宏伟; 廖显伯
2005
Source Publication物理学报
Volume54Issue:7Pages:3327-3331
Abstract采用甚高频等离子体增强化学气相沉积(VHF—PECVD)法,成功制备出从非晶到微晶过渡区域的硅薄膜.样品的微结构、光电特性及光致变化的测量结果表明这些处于相变域的硅薄膜兼具非晶硅优良的光电性质和微晶硅的稳定性.用这种两相结构的材料作为本征层制备了p-i-n太阳能电池,并测量了其稳定性.结果在AM1.5(100mW/c^m2)的光强下曝光800-5000min后,开路电压略有升高,转换效率仅衰退了2.9%.
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2108292
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16939
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郝会颖,孔光临,曾湘波,等. 非晶/微晶相变域硅薄膜及其太阳能电池[J]. 物理学报,2005,54(7):3327-3331.
APA 郝会颖,孔光临,曾湘波,许颖,刁宏伟,&廖显伯.(2005).非晶/微晶相变域硅薄膜及其太阳能电池.物理学报,54(7),3327-3331.
MLA 郝会颖,et al."非晶/微晶相变域硅薄膜及其太阳能电池".物理学报 54.7(2005):3327-3331.
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