SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE Growth of High Electron Mobility InP Epilayers
Su Yongchun; Yao Jianghong; Lin Yaowang; Xing Xiaodong; Pi Biao; Xu Bo; Wang Zhanguo; Xu Jingjun
2005
Source Publication半导体学报
Volume26Issue:8Pages:1485-1488
AbstractThe molecular beam epitaxial growth of high quality epilayers on (100) InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio (2.0-7.0) and growth rate (0.437 and 0. 791μm/h). Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/(V · s) and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.
metadata_83nankai university;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2131795
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16929
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Su Yongchun,Yao Jianghong,Lin Yaowang,et al. MBE Growth of High Electron Mobility InP Epilayers[J]. 半导体学报,2005,26(8):1485-1488.
APA Su Yongchun.,Yao Jianghong.,Lin Yaowang.,Xing Xiaodong.,Pi Biao.,...&Xu Jingjun.(2005).MBE Growth of High Electron Mobility InP Epilayers.半导体学报,26(8),1485-1488.
MLA Su Yongchun,et al."MBE Growth of High Electron Mobility InP Epilayers".半导体学报 26.8(2005):1485-1488.
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