SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter
Hou Lianping; Wang Wei; Zhu Hongliang; Zhou Fan; Wang Lufeng; Bian Jing
2005
Source Publication半导体学报
Volume26Issue:8Pages:1504-1508
AbstractA semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
metadata_83national research center for optoelectronic technology, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家自然科学基金重大研究计划,国家重点基础研究发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:2131799
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16925
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Hou Lianping,Wang Wei,Zhu Hongliang,et al. An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter[J]. 半导体学报,2005,26(8):1504-1508.
APA Hou Lianping,Wang Wei,Zhu Hongliang,Zhou Fan,Wang Lufeng,&Bian Jing.(2005).An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter.半导体学报,26(8),1504-1508.
MLA Hou Lianping,et al."An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter".半导体学报 26.8(2005):1504-1508.
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