SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors
Li Yuoyuan; Wang Zhanguo; Xu Bo; Jin Peng; Zhang Chunling; Guo Xia; Chen Min
2005
Source Publication半导体学报
Volume26Issue:8Pages:1519-1523
AbstractThe wet oxidation of AlGaAs with high Al content in a distributed Bragg reflectors (DBR) is studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Some voids distribute along the oxide/GaAs interfaces due to the stress induced by the wet oxidation of the AlGaAs layers. These voids decrease the shrinkage of the Al2O3 layers to 8% instead of the theoretical 20% when compared to the unoxidized AlGaAs layers. With the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. As a result,the oxide quality is better.
metadata_83institute of semiconductors, chinese academy of sciences;laboratory of photoelectronics technology, beijing university of technology
Subject Area半导体材料
Funding Organization国家重点基础研究发展计划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:2131802
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16923
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Yuoyuan,Wang Zhanguo,Xu Bo,et al. Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors[J]. 半导体学报,2005,26(8):1519-1523.
APA Li Yuoyuan.,Wang Zhanguo.,Xu Bo.,Jin Peng.,Zhang Chunling.,...&Chen Min.(2005).Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors.半导体学报,26(8),1519-1523.
MLA Li Yuoyuan,et al."Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors".半导体学报 26.8(2005):1519-1523.
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