SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs
SUN Guosheng; NING Jin; GAO Xin; GONG Quancheng; WANG Lei; LIU Xingfang; ZENG Yiping; LI Jinmin
Source Publication人工晶体学报
AbstractHomoepitaxial growth of4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes (SBDs) with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse (defined at ± 1V) is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Date Available2010-11-23
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Document Type期刊论文
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GB/T 7714
SUN Guosheng,NING Jin,GAO Xin,et al. Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs[J]. 人工晶体学报,2005,34(6):1006-1010.
APA SUN Guosheng.,NING Jin.,GAO Xin.,GONG Quancheng.,WANG Lei.,...&LI Jinmin.(2005).Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs.人工晶体学报,34(6),1006-1010.
MLA SUN Guosheng,et al."Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs".人工晶体学报 34.6(2005):1006-1010.
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