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题名: Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs
作者: SUN Guosheng;  NING Jin;  GAO Xin;  GONG Quancheng;  WANG Lei;  LIU Xingfang;  ZENG Yiping;  LI Jinmin
发表日期: 2005
摘要: Homoepitaxial growth of4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes (SBDs) with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse (defined at ± 1V) is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.
刊名: 人工晶体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
SUN Guosheng;NING Jin;GAO Xin;GONG Quancheng;WANG Lei;LIU Xingfang;ZENG Yiping;LI Jinmin.Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs,人工晶体学报 ,2005,34(6):1006-1010
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