SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
格点形状和取向对二维光子晶体禁带的影响
陆晓东; 韩培德; 全宇军; 叶志成; 窦金锋; 赵春华
2005
Source Publication光电子·激光
Volume16Issue:11Pages:1336-1341
Abstract以椭圆形和正方形介质柱组成的二维正方晶格为例,讨论了格点形状和取向变化时对光子晶体能带的影响,对比分析了波矢在周期性平面和不在周期性平面2种情况下的能带图.计算表明:格点形状和取向的适当变化可以使没有完全带隙的光子晶体出现完全带隙,低阶的完全带隙转变成高阶完全带隙.此外,经对比发现:波矢偏离周期性平面对椭圆形介质柱的正方晶格形成的完全带隙的影响,要比正方形介质柱正方晶格的完全带隙的影响要大得多.
metadata_83中国科学院半导体研究所光电子研发中心
Subject Area光电子学
Funding Organization国家自然科学基金资助项目,国家"863"计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2136683
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16911
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆晓东,韩培德,全宇军,等. 格点形状和取向对二维光子晶体禁带的影响[J]. 光电子·激光,2005,16(11):1336-1341.
APA 陆晓东,韩培德,全宇军,叶志成,窦金锋,&赵春华.(2005).格点形状和取向对二维光子晶体禁带的影响.光电子·激光,16(11),1336-1341.
MLA 陆晓东,et al."格点形状和取向对二维光子晶体禁带的影响".光电子·激光 16.11(2005):1336-1341.
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