SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅基近红外探测器研究进展
时文华; 王启明
2005
Source Publication半导体光电
Volume26Issue:6Pages:471-475
Abstract介绍了近年来在硅基近红外探测器方面所取得的最新进展,分析并讨论了各种吸收区材料以及器件结构,并对其发展与应用进行了展望。
metadata_83中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:2162799
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16893
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
时文华,王启明. 硅基近红外探测器研究进展[J]. 半导体光电,2005,26(6):471-475.
APA 时文华,&王启明.(2005).硅基近红外探测器研究进展.半导体光电,26(6),471-475.
MLA 时文华,et al."硅基近红外探测器研究进展".半导体光电 26.6(2005):471-475.
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