SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
Shen Wenjuan; Wang Jun; Duan Yao; Wang Qiyuan; Zeng Yiping
2005
Source Publication半导体学报
Volume26Issue:11Pages:2069-2073
AbstractHigh quality ZnO films are successfully grown on Si(100) substrates by metal-organic chemical vapor deposition at 300℃. The effects of the thickness of the ZnO films on crystal structure, surface morphology,and optical properties are investigated using X-ray diffraction, scanning probe microscopy,and photoluminescence spectra, respectively. It is shown that the ZnO films grown on Si substrates have a highly-preferential C-axis orientation,but it is difficult to obtain the better structural and optical properties of the ZnO films with the increasing of thickness. It is maybe due to that the grain size and the growth model are changed in the growth process.
metadata_83novel materials center, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:2162880
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16887
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Shen Wenjuan,Wang Jun,Duan Yao,et al. Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD[J]. 半导体学报,2005,26(11):2069-2073.
APA Shen Wenjuan,Wang Jun,Duan Yao,Wang Qiyuan,&Zeng Yiping.(2005).Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD.半导体学报,26(11),2069-2073.
MLA Shen Wenjuan,et al."Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD".半导体学报 26.11(2005):2069-2073.
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