SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD
Liang song; Zhu Hongliang; Pan Jiaoqing; Wang Wei
2005
Source Publication半导体学报
Volume26Issue:11Pages:2074-2079
metadata_83National Research Center o f Optoelectronic Technology, Institute o f Semiconductors , Chinese Academy of Sciences
Other AbstractSpace ordered 1.3μm self-assembled InAs QDs are grown on GaAs(100) vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer (SCL) and the strain buffer layer (SBL) in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD's emission over 1.3μm due to the effective strain reducing effect of SCL.
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2162881
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16885
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liang song,Zhu Hongliang,Pan Jiaoqing,等. Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD[J]. 半导体学报,2005,26(11):2074-2079.
APA Liang song,Zhu Hongliang,Pan Jiaoqing,&Wang Wei.(2005).Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD.半导体学报,26(11),2074-2079.
MLA Liang song,et al."Growth of Space Ordered on GaAs(100) Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD".半导体学报 26.11(2005):2074-2079.
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